Fin-Based Bipolar Junction Transistor and Method for Fabrication
AssigneeBroadcom Corporation
InventorsWei Xia, Xiangdong Chen
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Abstract
According to one exemplary embodiment, a fin-based bipolar junction transistor (BJT) includes a wide collector situated in a semiconductor substrate. A fin base is disposed over the wide collector. Further, a fin emitter and an epi emitter are disposed over the fin base. A narrow base-emitter junction of the fin-based BJT is formed by the fin base and the fin emitter and the epi emitter provides increased current conduction and reduced resistance for the fin-based BJT. The epi emitter can be epitaxially formed on the fin emitter and can comprise polysilicon. Furthermore, the fin base and the fin emitter can each comprise single crystal silicon.
Claims20
A fin-based bipolar junction transistor (BJT) comprising:
- a wide collector situated in a semiconductor substrate;
- a fin base disposed over said wide collector;
- a fin emitter and an epi emitter disposed over said fin base;
- wherein a narrow base-emitter junction of said fin-based BJT is formed by said fin base and said fin emitter, and wherein said epi emitter provides increased current conduction for said fin-based BJT.
A method of fabricating a fin-based bipolar junction transistor (BJT), said method comprising:
- forming a base well in a wide collector situated in a semiconductor substrate;
- etching said base well to form a fin base;
- epitaxially growing a semiconductor layer on said fin base;
- doping said semiconductor layer to form an epi emitter and a fin emitter.
Dependencies are inferred from the claim text.