Back to results
US 2013/0075726 A1Published application
Protection method for an electronic device and corresponding device
AssigneeSTMicroelectronics (Rousset) SAS
InventorPascal Fornara
Life of this patent
Estimating the term…
Abstract
The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.
Claims21
A semiconductor wafer for a silicon-on-insulator integrated circuit, comprising:
- an insulating region located between a first semiconductor substrate intended to receive at least one integrated circuit;
- a second semiconductor substrate, characterized in that the second semiconductor substrate contains at least one buried layer comprising at least one metal silicide;
- and
- at least one integrated circuit borne by the first semiconductor substrate of the semiconductor wafer.
1 more element
A process for protecting from a back-side radiation attack at least one integrated circuit in and on a first semiconductor substrate of a silicon-on-insulator wafer, comprising:
- forming an insulating region between the first semiconductor substrate;
- and a second semiconductor substrate;
- and
- forming at least one buried layer by implanting metal atoms into the second substrate and forming a metal silicide during thermal bonding of the second substrate and the insulating region secured to the first substrate before the at least one integrated circuits is produced in and on the first semiconductor substrate.
1 more element
A method of forming a device comprising:
- oxidizing at least a first major surface of a first substrate, forming thereby a first oxide layer;
- implanting atoms into a silicon substrate, the atoms selected from the group consisting essentially of elements that form a silicide with silicon;
- bonding the first oxide layer of the first substrate to a second substrate;
- and
- heating the silicon substrate at a temperature sufficient to cause formation of a buried silicide layer between the implanted atoms and the silicon substrate.
2 more elements
Dependencies are inferred from the claim text.