Semiconductor device

A semiconductor device comprising:

• a first conductive film and a second conductive film over an insulating surface;
• a semiconductor film comprising an oxide semiconductor over and in contact with the first conductive film, and the second conductive film;
• a third conductive film and a fourth conductive film over and in contact with the semiconductor film;
• an insulating film over the semiconductor film, the third conductive film, and the fourth conductive film;
• and
• a fifth conductive film provided in a position overlapping with the semiconductor film over the insulating film,
• wherein the third conductive film is electrically connected to the first conductive film, and
• wherein the fourth conductive film is electrically connected to the second conductive film.

A semiconductor device comprising:

• a first conductive film and a second conductive film over a layer;
• a semiconductor film comprising an oxide semiconductor over and in contact with the first conductive film and the second conductive film;
• a third conductive film over and in contact with the first conductive film;
• a fourth conductive film over and in contact with the second conductive film;
• a first insulating film over the semiconductor film, the third conductive film, and the fourth conductive film;
• and
• a fifth conductive film provided in a position overlapping with the semiconductor film over the first insulating film,
• wherein the layer comprises:
• a sixth conductive film electrically connected to the first conductive film;
• a seventh conductive film electrically connected to the second conductive film;
• and
• a second insulating film between the sixth conductive film and the seventh conductive film.