Semiconductor device
AssigneesNational Institute of Information and Communications Technology, Fujitsu Limited
InventorsAkira ENDOH, Issei WATANABE
Life of this patent
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Abstract
A semiconductor device includes a first semiconductor layer provided over a substrate; an electron transit layer contacting a top of the first semiconductor layer; and a second semiconductor layer contacting a top of the electron transit layer, wherein the electron transit layer has a dual quantum well layer having a structure where a first well layer, an intermediate barrier layer, and a second well layer are sequentially stacked, an energy of a conduction band of the intermediate barrier layer is lower than an energy of conduction band of the first semiconductor layer and the second semiconductor layer, and a ground level is generated in the first and second well layers, and a first excitation level is generated in the dual quantum well layer.
Claims20
A semiconductor device comprising:
- a first semiconductor layer provided over a substrate;
- an electron transit layer contacting a top of the first semiconductor layer;
- and
- a second semiconductor layer contacting a top of the electron transit layer,
- wherein the electron transit layer has a dual quantum well layer having a structure where a first well layer, an intermediate barrier layer, and a second well layer are sequentially stacked,
- an energy of a conduction band of the intermediate barrier layer is lower than an energy of conduction band of the first semiconductor layer and the second semiconductor layer, and
- a ground level is generated in the first and second well layers, and a first excitation level is generated in the dual quantum well layer.
Dependencies are inferred from the claim text.