Etching method, etching apparatus, and storage medium
AssigneesHyogo Prefecture, Tokyo Electron Limited
InventorsKenichi HARA, Isao YAMADA, Noriaki TOYODA, Takashi HAYAKAWA
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Abstract
Art etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside ox the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.
Claims27
An etching method for anisotropically etching a Cu film on a substrate surface, comprising:
- providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state;
- irradiating an oxygen gas cluster ion beam to the Cu film;
- and
- oxidizing Cu of the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam, and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.
The etching method of claim. 7, wherein the temperature of the substrate is lower than or equal to a boiling point of the organic compound.
An etching method for anisotropically etching a film on a substrate surface, comprising:
- providing a substrate in a chamber and setting the inside of the chamber to a vacuum state;
- and
- anisotropically etching the film by irradiating a gas cluster ion beam to the film while controlling a temperature of the substrate.
An etching apparatus for anisotropically etching a Go film on a substrate surface, comprising:
- a chamber in which a substrate having a Cu film on a surface thereof is accommodated;
- a substrate supporting member configured to support the substrate in the chamber;
- a gas exhaust unit configured to vacuum-exhaust the chamber;
- an organic compound gas supply unit configured to supply an organic compound gas into the chamber;
- an ion beam irradiation unit configured to irradiate an oxygen gas cluster ion beam to the Cu film on the surface of the substrate supported on the substrate supporting member;
- and
- a moving unit configured to generate planar relative movement between the gas cluster ion beam and the substrate,
- wherein when the oxygen gas cluster ton beam is irradiated to the Cu film, Cu of the Cu film is oxidized to a copper oxide by the oxygen gas cluster ions in the oxygen gas cluster ion beam, and the Cu film is anisotropically etched by reacting the copper oxide and the organic compound.
An etching apparatus for anisotropically etching a film on a substrate surface, comprising:
- a chamber in which, a substrate is accommodated;
- a substrate supporting member configured to support the substrate in the chamber;
- a temperature control unit configured to control, a temperature of the substrate on the substrate supporting member;
- a gas exhaust unit configured to vacuum-exhaust the chamber;
- a gas cluster ion beam irradiation unit configured to irradiate a gas cluster ion beam to the film on the surface of the substrate supported on the substrate supporting member;
- and
- a moving unit configured to generate planar relative movement between the gas cluster ion beam and the substrate,
- wherein the film is anisotropically etched by irradiating the gas cluster ion beam to the film while controlling the temperature of the substrate.
Dependencies are inferred from the claim text.