Slurry composition for cmp, and polishing method
AssigneeLG Chem, Ltd.
InventorsDong-Mok Shin, Eun-Mi Choi, Seung-Beom Cho
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Abstract
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.
Claims23
A chemical mechanical polishing (CMP) slurry composition comprising:
- an abrasive particle;
- a dispersant;
- an ionic polymer additive;
- and
- a non-ionic polymer additive comprising a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat units where at least one of the repeat units is a side chain.
Dependencies are inferred from the claim text.