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US 2012/0269969 A1Published application
Film deposition method and apparatus
AssigneeTokyo Electron Limited
InventorsKeisuke SUZUKI, Pao-Hwa Chou, Te Ching Chang
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AssigneeTokyo Electron Limited
InventorsKeisuke SUZUKI, Pao-Hwa Chou, Te Ching Chang
Estimating the term…
A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate is disclosed. The film deposition method includes steps of evacuating a process chamber where the substrate is accommodated, without supplying any gas to the process chamber; supplying an inert gas to the process chamber until a pressure within the process chamber becomes a predetermined pressure; supplying the first source gas to the process chamber filled with the inert gas at the predetermined pressure without evacuating the process chamber; stopping supplying the first source gas to the process chamber and evacuating the process chamber; supplying the second source gas to the process chamber; and stopping supplying the second source gas to the process chamber and evacuating the process chamber.
A film deposition method of depositing a thin film by alternately supplying at least a first source gas and a second source gas to a substrate thereby allowing the first and the second source gases to react with each other on the substrate, the film deposition method comprising steps of:
A film deposition apparatus comprising:
Dependencies are inferred from the claim text.