Thermal oxidation system and method for preventing water from accumulation

Abstract

The invention proposes a thermal oxidation system, which comprises: a reaction furnace for preparing silicon oxide by wet oxidation; a vapor generating chamber, feed gases reacting in the vapor generating chamber to generate water vapor and the generated water vapor entering the reaction furnace through the delivery of a pipeline; a feed gas inlet pipeline for providing the feed gases to the vapor generating chamber; a carrier gas inlet pipeline for providing the carrier gas to the reaction furnace; and a heater coupled to the feed gas inlet pipeline for heating the feed gases to promote their reaction to generate water vapor; characterized in that, the thermal oxidation system further comprises a heating device coupled to the carrier gas inlet pipeline. In the thermal oxidation system and method according to the invention, since the carrier gas is heated, liquid water is avoided to remain in the gas inlet pipeline, which controls the quality in growth of the film, and improves the reliability of the semiconductor device.

Dependencies are inferred from the claim text.