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US 2012/0268984 A1Published application
Adaptive Wordline Programming Bias of a Phase Change Memory
AssigneeIntel Corporation
InventorsRichard E. Fackenthal, Ferdinando Bedeschi, Meenatchi Jagasivamani, Ravi Annavajjhala, Enzo M. Donze
Life of this patent
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Abstract
The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.
Claims5
A system comprising:
- a processor;
- a wireless interface coupled to said processor;
- and
- a phase change memory coupled to said processor, said phase change memory including an array of phase change memory cells and a controller to cause a word line programming voltage of an unselected phase change memory cell to match a programming voltage applied to the bitline of a selected phase change memory cell.
1 more element
Dependencies are inferred from the claim text.