Semiconductor crystal body processing method and semiconductor crystal body processing device

A semiconductor crystal body processing method, comprising:

• providing a semiconductor crystal body sandwiched between a pair of pressurizing tools comprising a conductive material,
• applying a pulse current between the pair of pressurizing tools to thereby increase the temperature of the semiconductor crystal body by self heat generation to a target temperature which is equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than the body's melting point, and
• applying pressure between the pair of pressurizing tools while applying the pulse current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature to mold the semiconductor crystal body into a target shape by plastic deformation.