Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a chip region which is formed over the semiconductor substrate;
• a seal ring which surrounds the chip region in plan formed over the semiconductor substrate;
• an outer region which surrounds an outer periphery of the seal ring in plan formed over the semiconductor substrate;
• a first insulating layer which is provided in the chip region and the outer region over the semiconductor substrate and includes a first interlayer dielectric film having a first dielectric constant;
• a second insulating layer which is provided in the chip region and the outer region over the first insulating layer and includes a second interlayer dielectric film having a second dielectric constant larger than the first dielectric constant;
• a first wire which is provided within the first insulating layer in the chip region;
• a second wire and a via which are provided within the second insulating layer in the chip region, and the second wire being electrically connected to the first wire by the via;
• a plurality of first metallic patterns which are provided within the first insulating layer in the outer region;
• and
• a plurality of second metallic patterns which are provided within the second insulating layer in the outer region,
• wherein each of the second metal patterns is provided at a position deviated from each of the first metal patterns, so as to overlap a part of the each of the first metal patterns located directly under the each of the second metal patterns, and is spaced away from the seal ring, when seen in plan.