Circuit board, semiconductor element, semiconductor device, method for manufacturing circuit board, method for manufacturing semiconductor element, and method for manufacturing semiconductor device

A semiconductor element comprising:

• an electrode portion including
• a copper layer,
• a copper oxide layer formed thereon, and
• a removal portion formed by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer;
• and
• a solder bump for flip chip mounting formed on the copper layer exposed by the removal portion.

A semiconductor device comprising:

• a circuit board including
• an electrode portion having
• a copper layer,
• a copper oxide layer formed thereon, and
• a removal portion formed by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer, and
• a solder bump for flip chip mounting formed on the copper layer exposed by the removal portion;
• and
• a semiconductor element which has a joint portion to be fusion-joined to the copper layer exposed by the removal portion with the solder bump provided therebetween and which is flip-chip mounted to the circuit board.

A semiconductor device comprising:

• a semiconductor element including
• an electrode portion having
• a copper layer,
• a copper oxide layer formed thereon, and
• a removal portion formed by partially removing the copper
• oxide layer so as to partially expose the copper layer from the copper oxide layer, and a solder bump for flip chip mounting formed on the copper layer exposed by the removal portion;
• and
• a circuit board which has a joint portion to be fusion-joined to the copper layer exposed by the removal portion with the solder bump provided therebetween and to which the semiconductor element is flip-chip mounted.

A method for manufacturing a circuit board comprising:

• forming a copper oxide layer on a copper layer of an electrode portion of a circuit board;
• forming a removal portion by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer;
• and
• forming a solder bump for flip chip mounting on the copper layer exposed by the removal portion.

A method for manufacturing a semiconductor element comprising:

• forming a copper oxide layer on a copper layer of an electrode portion of a semiconductor element;
• forming a removal portion by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer;
• and
• forming a solder bump for flip chip mounting on the copper layer exposed by the removal portion.

A method for manufacturing a semiconductor device comprising:

• forming a copper oxide layer on a copper layer of an electrode portion of a circuit board;
• forming a removal portion by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer;
• forming a solder bump for flip chip mounting on the copper layer exposed by the removal portion;
• and
• performing fusion joining between the copper layer exposed by the removal portion and a joint portion of a semiconductor element.

A method for manufacturing a semiconductor device comprising:

• forming a copper oxide layer on a copper layer of an electrode portion of a semiconductor element;
• forming a removal portion by partially removing the copper oxide layer so as to partially expose the copper layer;
• forming a solder bump for flip chip mounting on the copper layer exposed by the removal portion;
• and
• performing fusion joining between the copper layer exposed by the removal portion and a joint portion of a circuit board with the solder bump provided therebetween.