Bipolar junction transistor with layout controlled base and associated methods of manufacturing
AssigneeMonolithic Power Systems, Inc.
InventorJeesung Jung
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Abstract
The present technology discloses a bipolar junction transistor (BJT) device integrated into a semiconductor substrate. The BJT device comprises a collector, a base and an emitter. The collector is of a first doping type on the substrate; the base is of a second doping type in the collector from the top surface of the semiconductor device and the base has a base depth; and the emitter is of a first doping type in the base from the top surface of the semiconductor device. The base depth is controlled by adjusting a layout width in forming the base.
Claims19
A method of forming a bipolar junction transistor (BJT) device, comprising:
- forming a collector region in a semiconductor substrate with a first doping type;
- forming a base region with a second doping type, the base region having a base depth;
- and
- forming an emitter region with the first doping type;
- and
- controlling the base depth by adjusting a layout width when forming the base region.
A semiconductor device, comprising a bipolar junction transistor (BJT) device integrated into a semiconductor substrate, wherein the BJT device comprises a collector, a base, and an emitter, and wherein:
- the collector is of a first doping type;
- the base is of a second doping type, the base having a base depth and a lateral span width;
- the emitter is of the first doping type;
- and
- wherein the base depth has a positive relationship with the lateral span width of the base.
A method of forming a bipolar junction transistor (BJT) device, comprising:
- forming a collector region with a first doping type, the collector having a well of the first doping type;
- forming a base region with a second doping type, and the base region having a base depth, and
- forming an emitter region with the first doping type;
- wherein forming the collector region includes adjusting a layout space width based on at least one of a target gain or a target breakdown voltage of the BJT device.
Dependencies are inferred from the claim text.