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US 2012/0267758 A1Published application
Isolated Capacitors Within Shallow Trench Isolation
AssigneeFreescale Semiconductor, Inc.
InventorsMehul D. Shroff, Mark D. Hall
Life of this patent
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Abstract
A semiconductor process and apparatus provide a shallow trench isolation capacitor structure that is integrated in an integrated circuit and includes a bottom capacitor plate that is formed in a substrate layer (10) below a trench opening, a capacitor dielectric layer (22) and a recessed top capacitor plate (28) that is covered by an STI region (30) and isolated from cross talk by a sidewall dielectric layer (23).
Claims21
A method for fabricating a capacitor, comprising:
- providing a semiconductor substrate structure;
- forming a trench opening in the semiconductor substrate structure to define bottom and sidewall surfaces of the trench opening where the bottom surface exposes a bottom capacitor plate semiconductor region in the semiconductor substrate structure;
- forming a capacitor dielectric layer on the bottom surface of the trench opening and an insulating dielectric sidewall layer on the sidewall surface of the trench opening, where the insulating dielectric sidewall layer is thicker than the capacitor dielectric layer;
- and
- forming a conductive top capacitor plate layer on the capacitor dielectric layer in the trench opening.
2 more elements
A method for fabricating a capacitor, comprising:
- providing a semiconductor substrate structure having a top surface;
- forming a trench opening in the semiconductor substrate structure by selectively removing a portion of the semiconductor substrate structure in a first region to define bottom and sidewall surfaces where the bottom surface exposes a semiconductor region in the semiconductor substrate structure which forms a bottom capacitor plate;
- forming a dielectric liner in the trench opening comprising a sidewall surface liner layer that is thicker than a bottom surface liner layer;
- and
- forming a conductive layer on the bottom surface liner layer in the trench opening as a top capacitor plate.
2 more elements
An integrated circuit trench capacitor structure, comprising:
- a first capacitor plate formed from a semiconductor layer located below a trench formed in a substrate;
- a capacitor dielectric layer located on the first capacitor plate and in the trench;
- and
- a second capacitor plate located on the capacitor dielectric layer from a conductive material that is located in the trench, where the second capacitor plate is electrically isolated from adjacent semiconductor material by a sidewall dielectric layer that is located on a sidewall of the trench and that is thicker than the capacitor dielectric layer.
1 more element
Dependencies are inferred from the claim text.