Semiconductor device having fuse elements and guard ring surrounding the fuse elements

A semiconductor device comprising:

• a fuse area in which a plurality of fuse elements are arranged;
• first to third ring elements surrounding the fuse area, the first ring element being formed in a first wiring layer, the second ring element being formed in a second wiring layer located above the first wiring layer, the third ring element being formed in a third wiring layer located above the second wiring layer;
• and
• first and second connecting ring elements surrounding the fuse area, the first connecting ring element connecting the first and second ring elements, the second connecting ring element connecting the second and third ring elements,
• wherein the first connecting ring element has a smaller diameter than the second connecting ring element.

A semiconductor device comprising:

• a fuse area in which a plurality of fuse elements formed in a first wiring layer are arranged;
• and
• first to third ring elements surrounding the fuse area, the first ring element being formed in the first wiring layer, the second ring element being formed in a second wiring layer located above the first wiring layer, the third ring element being formed in a third wiring layer located above the second wiring layer,
• wherein the second ring element has an inner periphery that is positioned at closer to the fuse area than an inner periphery of the third ring element.