Solid-state image pickup device and method for manufacturing the same

A method for manufacturing a backside-illuminated solid-state image pickup device, comprising:

• implanting arsenic ions into a second main surface of a semiconductor substrate;
• reducing the thickness of the semiconductor substrate from a first main surface side opposite to the second main surface;
• attaching a processing substrate to the second main surface side of the semiconductor substrate;
• forming a wiring layer on the first main surface side of the semiconductor substrate;
• and
• removing the processing substrate.

A method for manufacturing a backside-illuminated solid-state image pickup device, comprising:

• forming a wiring layer on a first main surface of a semiconductor substrate;
• reducing the thickness of the semiconductor substrate from a second main surface side opposite to the first main surface;
• and
• implanting arsenic ions into the second main surface of the semiconductor substrate.

A method for manufacturing a backside-illuminated solid-state image pickup device, comprising:

• implanting arsenic ions into an SOI layer of an SOI substrate, the SOI substrate including the SOI layer, a BOX layer, and a bulk substrate;
• forming a silicon film on the SOI layer by epitaxial growth;
• forming a wiring layer on a side of the SOI layer opposite to the BOX layer;
• and
• removing the bulk substrate.