Compressively Stressed FET Device Structures

An FET device structure, comprising:

• a number N of Fin-FET devices in a row having N fins, which fins are aligned substantially in parallel with a length direction and spaced apart of each other perpendicularly to said length direction, wherein said N Fin-FET devices have N device channels, wherein said N fins have ending cross sections aligned substantially perpendicular to said length direction;
• an oxide element extending perpendicularly to said length direction, abutting said ending cross sections and exerting a pressure onto said N fins in said length direction;
• and
• wherein said N device channels are compressively stressed due to said pressure on said N fins.