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US 2012/0267710 A1Published application
Semiconductor Device
AssigneeRohm Co., Ltd.
InventorMasaru Takaishi
Life of this patent
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Abstract
Provided is a semiconductor device in which on-resistance is largely reduced. In a region (2a) of an N type epitaxial layer (2) of the semiconductor device 20, each region between neighboring trenches (3) is blocked with a depletion layer (14) formed around a trench (3) so that a current passage (12) is interrupted, while a part of the depletion layer (14) formed around the trench (3) is deleted so that the current passage (12) is opened. In a region (2b), a junction portion (8) between the N type epitaxial layer (2) and a P+ type diffusion region (7) makes a Zener diode (8).
Claims13
-27. (canceled)
A semiconductor device comprising:
- a first region of one conductivity type;
- a second region of the one conductivity type provided on the first region;
- a third region of an inverse conductivity type provided on the first region so as to be contiguous with the second region;
- and
- a switching device provided in the second region,
- wherein a first diffusion region of the one conductivity type electrically connected to the second region is formed in an upper region within the third region opposite from the first region.
3 more elements
Dependencies are inferred from the claim text.