GaN FILM STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

A semiconductor light emission device comprising:

• at least two support members partially disposed on a substrate;
• a first buffer layer configured to extend along surfaces of the at least two support members;
• a lower electrode layer disposed on the first buffer layer;
• a second buffer layer disposed on the lower electrode layer;
• an n-GaN layer disposed on the second buffer layer;
• an active layer disposed on the n-GaN layer;
• a p-GaN layer disposed on the active layer;
• and
• a p-electrode layer disposed on the p-GaN layer,
• wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.

A semiconductor piezoelectric sensor comprising:

• at least two support members partially disposed on a substrate;
• a first buffer layer configured to extend along surfaces of the at least two support members;
• a lower electrode layer disposed on the first buffer layer;
• a second buffer layer disposed on the lower electrode layer;
• a gallium nitride (GaN) thin layer disposed on the second buffer layer;
• and
• an upper electrode layer disposed on the GaN thin layer,
• wherein the at least two support members define at least one air cavity between the substrate and the first buffer layer.

A method of fabricating a semiconductor device, comprising:

• forming a sacrificial layer on a substrate;
• forming a first buffer layer on the sacrificial layer;
• forming an electrode layer on the first buffer layer;
• forming a second buffer layer on the electrode layer;
• partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and at least one air cavity between the substrate and the first buffer layer;
• and
• forming a gallium nitride (GaN) thin layer on the second buffer layer.