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US 2012/0267625 A1Published application
Thin film transistor and display device
AssigneeSony Corporation
InventorKazuhiko Tokunaga
Life of this patent
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Abstract
A thin film transistor that includes an oxide semiconductor film forming a channel, a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film and a pair of electrodes formed as a source region and a drain region.
Claims13
A thin film transistor comprising:
- an oxide semiconductor film forming a channel;
- a gate electrode disposed on one side of the oxide semiconductor film via a gate insulating film;
- and
- a pair of electrodes formed as a source region and a drain region, the source and drain regions in contact with a side surface of the oxide semiconductor film.
1 more element
A thin film transistor comprising an oxide semiconductor film forming a channel, wherein the oxide semiconductor film comprises a compound, InMZnO, where M represents Ga, Al or Fe.
Dependencies are inferred from the claim text.