Tantalum sputtering target and method for manufacturing the same, and method for manufacturing semiconductor element
AssigneesToshiba Materials Co., Ltd., Kabushiki Kaisha Toshiba
InventorsNobuaki NAKASHIMA, Yoshiki ORIMOTO
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Abstract
In one embodiment, a method for manufacturing a tantalum sputtering target includes a first knead forging step, a first heating step, a second knead forging step, a cold rolling step, and a second heating step. In the first knead forging step, a tantalum material is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction. In the second knead forging step, one set or more of knead forging is performed after the first heating step, each of the steps being cold forging in the directions parallel to and perpendicular to the thickness direction.
Claims13
A method for manufacturing a tantalum sputtering target, comprising:
- a first knead forging step in which a tantalum material made of a columnar tantalum ingot or billet is subjected to two sets or more of knead forging, each of the sets being cold forging in directions parallel to and perpendicular to a thickness direction;
- a first heating step in which recrystallization is caused at a 1000° C. temperature or higher after the first knead forging step;
- a second knead forging step in which one set or more of knead forging is performed after the first heating step, each of the sets being cold forging in the directions parallel to and perpendicular to the thickness direction;
- a cold rolling step in which cold rolling is performed after the second knead forging step;
- and
- a second heating step in which heating at a 900° temperature or higher is performed after the cold rolling step.
A tantalum sputtering target having a 99.99 wt % tantalum purity or more and a 50 μm average crystal grain size or less,
- wherein, when X-ray diffraction (2θ) of a sputtered surface is measured, peak relative intensities of (110), (211), and (200) planes become smaller in order of (110)>(211)>(200).
Dependencies are inferred from the claim text.