Plasma processing apparatus

A plasma processing apparatus, comprising:

• a vacuum processing chamber in which a plasma processing is applied to a sample;
• a dielectric window which forms an upper surface of said vacuum processing chamber;
• a gas-introducing unit for introducing a gas into said vacuum processing chamber;
• a sample stage which is deployed in said vacuum processing chamber for mounting said sample thereon;
• an induction coil which is provided over said dielectric window;
• a radio-frequency power-supply for supplying a radio-frequency power to said induction coil;
• and
• a conductor which is set up between said induction coil and said dielectric window, is electrically connected in a full circle so that an induced current can be formed, is provided side by side with at least a part of said induction coil in its circumferential direction along said induction coil, and is set up at a location where intensity of an induced magnetic field generated from said induction coil is wished to be weakened and relationship of Lp≧Lr is satisfied letting the shortest distance from said induction coil to surface of said conductor be Lr and letting the shortest distance from said induction coil to a plasma generated directly under said dielectric window be Lp.