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AssigneeSanyo Electric Co., Ltd.
InventorsKazuya Murata, Mitsuhiro Matsumoto
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In order to increase photoelectric conversion efficiency in a photoelectric conversion device, there is disclosed a photoelectric converter containing a photoelectric conversion unit in which a p-type layer (40) containing a p-type dopant, an i-type layer (42) that is a microcrystalline silicon layer that is an electricity-generating layer, and an n-type layer (44) containing an n-type dopant are layered, wherein the p-type layer (40) is caused to have a layered structure comprising a first p-type layer (40a) that is a microcrystalline silicon layer, and a second p-type layer (40b) containing at least one of an amorphous silicon carbide p-type layer and an amorphous silicon p-type layer disclosed between the microcrystalline silicon p-type layer (40a) and the i-type layer (42). The second p-type layer (40b) is provided with an oxide layer on the side of the i-type layer (42).
A photoelectric conversion device, which includes a photoelectric conversion unit formed by laminating a p-type layer containing a p-type dopant, an i-type layer that is a microcrystalline silicon layer employed as an electricity-generating layer, and an n-type layer containing an n-type dopant, characterized in that:
(canceled)
A manufacturing method, for a photoelectric conversion device that includes a photoelectric conversion unit wherein a p-type layer containing a p-type dopant, an i-type layer that is a microcrystalline silicon layer and serves as an electricity-generating layer, and an n-type layer containing an n-type dopant are laminated, characterized by comprising the steps of:
Dependencies are inferred from the claim text.