Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsYi Guo, Zhendong Liu, Kancharla-Arun Kumar Reddy, Guangyun Zhang
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Abstract
A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
Claims8
A chemical mechanical polishing composition, comprising, as initial components:
- water;
- 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm;
- and,
- 0.001 to 1 wt % of an adamantyl substance according to formula (II):
- wherein A is selected from N and P;
- wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group;
- and, wherein the anion in formula (II) can be any anion that balances the + charge on the cation in formula (II).
Dependencies are inferred from the claim text.