Method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Yukiteru Matsui
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Abstract
According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.
Claims20
A method of manufacturing a semiconductor device comprising:
- contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable;
- and
- feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film, the polishing foam being obtained by turning an aqueous dispersion into a foamy body, the aqueous dispersion comprising 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total amount of the aqueous dispersion.
A polishing apparatus comprising:
- a polishing pad supported on a rotatable turntable;
- a polishing head configured to held a semiconductor substrate having a film formed thereon and contact the film with the polishing pad;
- and
- a polishing foam generator configured to accommodate an aqueous dispersion comprising abrasive grain and a foam forming and retaining agent and discharge, through a mesh, the aqueous dispersion as a foamy body to feed the polishing foam to a region of the polishing pad with which the film is contacted.
Dependencies are inferred from the claim text.