Chemical mechanical polishing (cmp) processing of through-silicon via (tsv) and contact plug simultaneously
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa CHEN, I-Ching LIN
Life of this patent
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Abstract
A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process.
Claims20
A method of forming a through-silicon via (TSV) structure, comprising:
- forming a dielectric layer over a semiconductor substrate having a first region and a second region;
- forming a first opening in the dielectric layer in the first region;
- forming a second opening in the second region extending through the dielectric layer and a portion of the semiconductor substrate;
- forming a conductive material layer over the dielectric layer, filling the first opening and the second opening;
- removing portions of the conductive material layer positioned outside the first opening and the second opening to expose the dielectric layer, wherein a portion of the conductive material layer remaining in the second opening forms the TSV structure.
A method of forming a through-silicon via (TSV) structure, comprising:
- forming a dielectric layer over a semiconductor substrate having a first region and a second region;
- forming a first opening in the dielectric layer in the first region;
- forming a second opening in the second region extending through the dielectric layer and a portion of the semiconductor substrate;
- filling the first opening and the second opening with conductive material;
- simultaneously removing portions of the conductive material positioned outside the first opening and the second until the dielectric layer is exposed, wherein a portion of the conductive material remaining in the second opening forms the TSV structure.
A method of forming a through-silicon via (TSV) structure, comprising:
- forming a dielectric layer over a semiconductor substrate having a first region and a second region;
- forming a first opening in the dielectric layer in the first region;
- forming a second opening in the second region extending through the dielectric layer and a portion of the semiconductor substrate;
- filling the first opening and the second opening with conductive material;
- removing portions of the conductive material positioned outside the first opening and the second by a single chemical mechanical polishing (CMP) process until the dielectric layer is exposed, wherein a portion of the conductive material remaining in the second opening forms the TSV structure.
Dependencies are inferred from the claim text.