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US 2012/0258586 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorHikaru Kokura
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Abstract
A semiconductor device has a semiconductor substrate, a plurality of first conductive patterns, a second conductive pattern having a top surface of which stepwisely or gradually decreases in height in a direction from a side facing the first conductive pattern toward an opposite side, a first insulation film formed over the plurality of first conductive patterns and the second conductive pattern, and a third conductive pattern formed over the first insulation film.
Claims6
A method of manufacturing a semiconductor device comprising:
- forming a first conductive film over a semiconductor substrate;
- etching the first conductive film thereby forming a plurality of first conductive patterns provided in a first direction and a second conductive pattern provided in parallel to the plurality of first conductive patterns;
- covering a part of the second conductive pattern closer to the first conductive pattern with a first mask pattern, while exposing a second part of the second conductive pattern further from the first conductive pattern;
- etching the second conductive pattern in a thickness direction with the first mask pattern as a mask;
- forming a first insulation film over the plurality of first conductive patterns and the second conductive pattern;
- and
- forming a third conductive film over the first insulation film.
4 more elements
Dependencies are inferred from the claim text.