Novel tarc material for immersion watermark reduction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu CHANG
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Abstract
A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer.
Claims20
A coating material for use during a lithography process, wherein the coating material is disposed over a resist layer, the coating material comprising an acid that substantially neutralizes a quencher that diffuses into the coating material from the resist layer.
A coating material for use during a lithography process, wherein the coating material is disposed over a resist layer, the coating material comprising a chelate compound that bonds with a quencher diffusing into the coating material from the resist layer.
An antireflective coating layer disposed on a material layer, the antireflective coating layer comprising:
- a polymer;
- and
- a quencher catcher chemically bonded to the polymer, wherein the quencher catcher substantially neutralizes any quencher that diffuses into the antireflective layer from the material layer.
Dependencies are inferred from the claim text.