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AssigneeNanya Technology Corporation
InventorsKuo Kuei Fu, Yi Nan Chen, Hsien Wen Liu
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A model of defining a photoresist pattern collapse rule is provided. A portion of the photoresist pattern which corresponds to a second line pattern of a photomask layout is defined as non-collapse if d≧5a and c≧1.5b or if 5a>d≧3a and c≧1.2b, wherein b is the widths of two first line patterns, c is the width of a second line pattern of the photomask layout, and a and d are distances between the second line pattern and the two first line patterns. Accordingly, a photomask layout, a semiconductor substrate and a method for improving photoresist pattern collapse for post-optical proximity correction are also provided.
A model of defining a photoresist pattern collapse rule for post-optical proximity correction (post-OPC), comprising two first dimensions, a second dimension, a third dimension and a fourth dimension, wherein the two first and second dimensions correspond to two first widths b of two first line patterns (13, 14) and a second width c of a second line pattern (18) of a photomask layout (10), the second line pattern is between and substantially parallel to the two first line patterns, and the third and fourth dimensions correspond to a first distance a and a second distance d between the second line pattern and the two first line patterns,
A photomask layout for preventing photoresist pattern collapse for post-optical proximity correction (post-OPC), comprising at least one region which includes two first line patterns having a first width b and a second line pattern having a second width c, wherein the second line pattern is between and substantially parallel to the two first line patterns, and there exist a first distance a and a second distance d between the second line pattern and the two first line patterns,
A semiconductor substrate (30) including a photoresist layer (32) which has a photoresist pattern for preventing photoresist pattern collapse for post-optical proximity correction (post-OPC), wherein the photoresist pattern comprises at least one region (20A) which includes two first line patterns (23, 24) and at least one second line pattern (28), the photoresist pattern corresponds to a photomask layout comprising at least one region which includes two first line patterns having a first width b and a second line pattern having a second width c, the second line pattern of the photomask layout is between and substantially parallel to the two first line patterns of the photomask layout, and there exist a first distance a and a second distance d between the second line pattern and the two first line patterns of the photomask layout,
A method (50) for defining photoresist pattern collapse for post-optical proximity correction (post-OPC), comprising the steps of:
Dependencies are inferred from the claim text.