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US 2012/0257446 A1Published application
Unipolar spin-transfer switching memory unit
AssigneeSeagate Technology LLC
InventorsXiaohua Lou, Haiwen Xi
Life of this patent
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Abstract
A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
Claims19
A spin-transfer torque memory unit comprising:
- a bit line;
- a word line;
- a magnetic tunnel junction data cell electrically coupled to the bit line and the word line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar forward bias voltage pulse across the magnetic tunnel junction data cell;
- a diode electrically coupled between the magnetic tunnel junction data cell and the word line or bit line;
- and
- a voltage source providing the unipolar forward bias voltage pulse across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
3 more elements
A method comprising:
- switching a magnetic tunnel junction data cell from a high resistance state to a low resistance state by passing a first forward bias voltage pulse having a first polarity through a diode and the magnetic tunnel junction data cell;
- and
- switching the magnetic tunnel junction data cell from the low resistance state to the high resistance state by passing a second forward bias voltage pulse having the first polarity through the diode and the magnetic tunnel junction data cell.
A memory unit comprising:
- a magnetic tunnel junction data cell electrically coupled to a bit line and a word line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell, the magnetic tunnel junction data cell comprises an oxide barrier layer comprising Ta2O5 and having a thickness in a range from 0.5 to 1 nanometer between a ferromagnetic free layer comprising NiFe, CoFe, or Co and a ferromagnetic pinned layer comprising NiFe, CoFe, or Co;
- a diode electrically coupled between the magnetic tunnel junction data cell and the word line or bit line;
- and
- a voltage source providing the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
1 more element
A memory unit comprising:
- a magnetic tunnel junction data cell electrically coupled to a bit line and a word line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell, the magnetic tunnel junction data cell comprises an tunnel barrier layer comprising GaAs and having a thickness in a range from 5 to 15 nanometer between a ferromagnetic free layer comprising Fe and a ferromagnetic pinned layer comprising Fe;
- a diode electrically coupled between the magnetic tunnel junction data cell and the word line or bit line;
- and
- a voltage source providing the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
1 more element
A memory unit comprising:
- a magnetic tunnel junction data cell electrically coupled to a bit line and a word line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell, the magnetic tunnel junction data cell comprises an oxide barrier layer comprising Al2O3 between a ferromagnetic free layer comprising NiFe, CoFe, or Co and a ferromagnetic pinned layer comprising NiFe, CoFe, or Co;
- a diode electrically coupled between the magnetic tunnel junction data cell and the word line or bit line;
- and
- a voltage source providing the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.
1 more element
Dependencies are inferred from the claim text.