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US 2012/0257436 A1Published application
Semiconductor intergrated circuit and operating method thereof
AssigneeHynix Semiconductor Inc.
InventorSung Yeon LEE
Life of this patent
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Abstract
A semiconductor integrated circuit includes a variable resistive element, a current supply unit and a control signal generating unit. The resistance of the variable resistive element is changed depending on current flowing therethrough. The current supply unit controls the current in response to a control signal. The control signal generating unit generates the control signal by sensing the change in the resistance of the variable resistive element.
Claims34
A semiconductor integrated circuit comprising:
- a variable resistive element of which resistance is changed depending on current flowing therethrough;
- a current supply unit configured to control the current in response to a control signal;
- and
- a control signal generating unit configured to generate the control signal by sensing the change in the resistance of the variable resistive element.
1 more element
A semiconductor integrated circuit, comprising:
- a variable resistive element coupled between a first node and a second node, the variable resistive element of which resistance is changed depending on the direction of current between the first and second nodes;
- is a first supply current control unit coupled between an external voltage and the first node so as to control the supply of current from the external voltage to the first node in response to an input signal;
- a first sink current control unit coupled between the second node and a ground voltage so as to control a current sink from the second node to the ground voltage in response to the input signal;
- a second supply current control unit coupled between the external voltage and the second node so as to control the supply of current from the external voltage to the second node in response to the input signal;
- and
- a second sink current control unit coupled between the first node and the ground voltage so as to control a current sink from the first node to the ground voltage in response to the input signal,
- wherein one or more of the first supply current control unit, the first sink current control unit, the second supply current control unit and the second sink current control unit control the current according to both of the input signal and the resistance of the variable resistive element.
4 more elements
A semiconductor integrated circuit comprising:
- a memory element for transforming a variable resistive state, coupled between a first node and a second node, the memory element of which resistance is changed depending on a direction of current between the first and second nodes;
- a first supply current control unit coupled between an external voltage and the first node so as to control the supply of current from the external voltage to the first node in response to an input signal received as new data for recording;
- a first sink current control unit coupled between the second node and a ground voltage so as to control a current sink from the second node to the ground voltage in response to the input signal;
- a second supply current control unit coupled between the external voltage and the second node so as to control the supply of is current from the external voltage to the second node in response to the input signal;
- and
- a second sink current control unit coupled between the first node and the ground voltage so as to control a current sink from the first node to the ground voltage in response to the input signal,
- wherein one or more of the first supply current control unit, the first sink current control unit, the second supply current control unit and the second sink current control unit supply or interrupt the current flowing through the memory element depending on an identity between data previously recorded in the memory element and new data for recording.
4 more elements
A semiconductor integrated circuit, comprising:
- a variable resistive element configured to include a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer formed between the first and second ferromagnetic layers, the variable resistive element of which resistance is changed depending on current flowing through the first ferromagnetic layer, the insulating layer and the second ferromagnetic layer;
- and
- a current control unit configured to control the current flowing through the variable resistive element according to the resistance of the variable resistive element.
Dependencies are inferred from the claim text.