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US 2012/0257435 A1Published application
Non-salicide polysilicon fuse
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Chieh LIN, David YEN, Ian CHIU, Kuoyuan (Peter) HSU
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Abstract
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.
Claims20
A non-salicided polysilicon fuse, comprising:
- an anode, wherein a first portion of the anode is made of salicided polysilicon and a second portion of the anode is made of non-salicided polysilicon;
- a cathode;
- wherein a first portion of the cathode is made of salicided polysilicon and a second portion of the cathode is made of non-salicided polysilicon;
- and
- a fuse link;
- wherein the fuse link is made of non-salicided polysilicon, and wherein the fuse link is physically connected to the second portion of the anode and the second portion of the cathode.
3 more elements
A one-time programmable (OTP) memory cell, comprising:
- a programming transistor;
- and
- a non-salicided polysilicon fuse, comprising:
- an anode, wherein a first portion of the anode is made of salicided polysilicon and a second portion of the anode is made of non-salicided polysilicon,
- a cathode;
- wherein a first portion of the cathode is made of salicided polysilicon and a second portion of the cathode is made of non-salicided polysilicon, wherein the cathode is connected to a drain of the programming transistor, and
- a fuse link;
- wherein the fuse link is made of non-salicided polysilicon, and wherein the fuse link is physically connected to the second portion of the anode and the second portion of the cathode.
5 more elements
A method of forming a non-salicided polysilicon fuse, comprising:
- forming a polysilicon fuse structure on a substrate, wherein the polysilicon fuse structure includes an anode region, a cathode region, and a fuse link, and wherein the fuse link is between and connected to the anode region and the cathode region;
- forming a dielectric layer to cover the fuse link, a first portion of the cathode region, and a first portion of the anode region;
- and
- performing silicide formation to convert polysilicon not covered by the dielectric layer into salicided polysilicon.
1 more element
Dependencies are inferred from the claim text.