Manufacturing method of liquid crystal display device and liquid crystal display device

A manufacturing method of liquid crystal display device comprising:

• a gate electrode forming step of forming a first gate electrode at a pixel region of a glass substrate and a second gate electrode at a thickness TEG zone of the glass substrate;
• a gate insulating film forming step of overlaying a gate insulating film on the glass substrate formed with the first and second gate electrodes;
• a semiconductor layer forming step of forming a first semiconductor layer on the gate insulating film formed with the first gate electrode of the pixel region, and a second semiconductor layer on the gate insulating film formed with the second gate electrode of the thickness TEG zone;
• a pixel electrode forming step of forming a first pixel electrode on the gate insulating film of the pixel region in spaced relation to the first semiconductor layer, and forming a second pixel electrode on the gate insulating film in the vicinity of the thickness TEG zone in spaced relation to the second semiconductor layer;
• a drain electrode forming step of forming a drain electrode electrically interconnecting the first semiconductor layer and the first pixel electrode of the pixel region by overlaying a flat solid conductive film on the glass substrate, followed by removing the conductive film with the use of a photoresist pattern as a mask while exposing the first semiconductor layer and the second semiconductor layer;
• a channel etching step of etching the exposed first semiconductor layer by continuously using the photoresist pattern as the mask and by using an etching amount of the second semiconductor layer as an index;
• an insulating film forming step of subsequently overlaying an insulating film on the glass substrate;
• and
• a common electrode forming step of forming a common electrode on the insulating film on the first pixel electrode.

A liquid crystal display device comprising a pixel region defined by a first region on a substrate,

• wherein disposed at the pixel region are a gate electrode;
• a gate insulating film overlaid on the gate electrode;
• a semiconductor layer formed on the gate insulating film overlaid on the gate electrode;
• a pixel electrode spaced away from the semiconductor layer;
• a drain electrode extended on the semiconductor layer and the pixel electrode for electrically interconnecting the semiconductor layer and the pixel electrode;
• and a common electrode formed upwardly of the pixel electrode, and
• wherein at a second region on the substrate, an electrode is formed at the same time as the pixel electrode and from the same material as the pixel electrode.