Method and system for inspecting indirect bandgap semiconductor structure
AssigneeBt Imaging Pty Ltd
InventorsThorsten Trupke, Robert Andrew Bardos
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AssigneeBt Imaging Pty Ltd
InventorsThorsten Trupke, Robert Andrew Bardos
Estimating the term…
Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specificed emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.
1-116. (canceled)
A method of analysing one or more properties of an indirect bandgap semiconductor material, said method comprising the steps of:
In a multi-step process for producing semiconductor devices from an indirect bandgap semiconductor material, a method of analysing one or more properties of said material, said method comprising the steps of:
A method for analysing one or more properties of an indirect bandgap semiconductor material in a process for producing a semiconductor device from said material, said method comprising the steps of:
A system for analysing one or more properties of an indirect bandgap semiconductor material, said system comprising:
In a multi-step process for producing semiconductor devices from an indirect bandgap semiconductor material, a system for analysing one or more properties of said material, said system comprising:
Dependencies are inferred from the claim text.