Semiconductor device and manufacturing method therefor

A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, comprising:

• a device region formation step of forming a device region comprised of the semiconductor layer on a growth substrate through a lift-off layer;
• a columnar member formation step of forming a columnar member on the growth substrate;
• a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate;
• a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate;
• and
• a step of separating the columnar member from the supporting substrate,

A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, comprising:

• a device region formation step of forming a device region comprised of the semiconductor layer on a growth substrate through a lift-off layer;
• a columnar member formation step of forming a columnar member on the supporting substrate;
• a bonding step of bonding the semiconductor layer on the supporting substrate, and bonding the columnar member on the growth substrate;
• a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate;
• and
• a step of separating the columnar member from the supporting substrate.