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US 2012/0256324 A1Published application
Method for Improving Performance of Etch Stop Layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMiao-Cheng Liao, Huai-Tei Yang, Chung-Ren Sun, Jinn-Kwei Liang, Ting-Xiao Liao
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Abstract
A method of forming an interconnect structure includes providing a dielectric layer; forming a metal line in the dielectric layer; and forming a composite etch stop layer (ESL), which includes forming a lower ESL over the metal line and the dielectric layer; and forming an upper ESL over the lower ESL. The upper ESL and the lower ESL have different compositions. The step of forming the lower ESL and the step of forming the upper ESL are in-situ performed.
Claims8
A method comprising:
- providing a dielectric layer comprising a top surface;
- forming a metal line extending from the top surface into the dielectric layer;
- forming a lower etch stop layer (ESL) comprising introducing a precursor and a nitrogen-containing gas into a process chamber, wherein the lower ESL is over and contacting the metal line and the dielectric layer, and wherein the lower ESL comprises a material selected from the group consisting essentially of silicon nitride (SiN) and silicon oxynitride (SiON);
- and
- forming an upper ESL over and contacting the lower ESL comprising continuing to introduce the precursor, wherein the nitrogen-containing gas is turned off.
2 more elements
An interconnect structure comprising:
- a dielectric layer comprising a top surface;
- a metal line extending from the top surface into the dielectric layer;
- and
- a composite etch stop layer (ESL) comprising:
- a lower ESL over and contacting the metal line and the dielectric layer, wherein the lower ESL is formed of a material selected from the group consisting essentially of silicon nitride (SiN) and silicon oxynitride (SiON);
- and
- an upper ESL over the lower ESL, wherein the upper ESL comprises silicon and carbon, and is free from nitrogen.
4 more elements
Dependencies are inferred from the claim text.