Monitoring pattern, and pattern stitch monitoring method and wafer therewith
AssigneeNanya Technology Corporation
InventorsKuo Kuei Fu, Yi Nan Chen, Hsien Wen Liu
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Abstract
A monitoring pattern for pattern stitch in double patterning is provided with a plurality of pattern cuts that include at least one line-ended cut and at least one non-line-ended cut, wherein every pattern cut has a stitching critical dimension (CD). A semiconductor wafer having at least one target pattern corresponding to the monitoring pattern is also provided. A method for monitoring pattern stitch can be preformed to check for pattern cut displacement in stitching areas and to increase reliability and printability of layouts, by comparing corresponding stitching critical dimensions of the target pattern and the monitoring pattern.
Claims17
A monitoring pattern (20) for pattern stitch in double patterning, comprising a plurality of pattern cuts that include at least one line-ended cut (21) and at least one non-line-ended cut, wherein every pattern cut has a stitching critical dimension (CD) (CD1, CD2, CD3).
A method for monitoring pattern stitch with a monitoring pattern in double patterning, comprising the steps of:
- locating a monitoring pattern in at least one area of a semiconductor wafer (50), wherein the at least one area of the semiconductor wafer has a target pattern (60) corresponding to the monitoring pattern, the monitoring pattern comprises a plurality of pattern cuts that include at least one line-ended cut (61) and at least one non-line-ended cut, and every pattern cut has a stitching critical dimension (CD4, CD5, CD6);
- comparing corresponding stitching critical dimensions of the target pattern and the monitoring pattern;
- and
- determining a measure for adjusting the pattern stitch of the target pattern according to the comparison results.
A semiconductor wafer, comprising at least one target pattern corresponding to a monitoring pattern for pattern stitch in double patterning, wherein the monitoring pattern comprises a plurality of pattern cuts that include at least one line-ended cut and at least one non-line-ended cut, wherein every pattern cut has a stitching critical dimension (CD).
Dependencies are inferred from the claim text.