One-time programmable devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJyun-Ying LIN, Chun-Yao KO, Ting-Chen HSU
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Abstract
A one-time programmable (OTP) device includes at least one transistor that is electrically coupled with a fuse. The fuse includes a silicon-containing line continuously extending between a first node and a second node of the fuse. A first silicide-containing portion is disposed over the silicon-containing line. A second silicide-containing portion is disposed over the silicon-containing line. The second silicide-containing portion is separated from the first silicide-containing portion by a predetermined distance. The predetermined distance is substantially equal to or less than a length of the silicon-containing line.
Claims20
A one-time programmable (OTP) device comprising:
- at least one transistor;
- and
- a fuse electrically coupled with the at least one transistor, the fuse comprising:
- a silicon-containing line continuously extending between a first node and a second node of the fuse;
- a first silicide-containing portion disposed over the silicon-containing line;
- and
- a second silicide-containing portion disposed over the silicon-containing line, wherein the second silicide-containing portion is separated from the first silicide-containing portion by a predetermined distance, and the predetermined distance is substantially equal to or less than a length of the silicon-containing line.
An OTP device comprising:
- at least one transistor:
- and
- a fuse electrically coupled with the at least one transistor, the fuse comprising:
- a silicon-containing line continuously extending between a first node and a second node of the fuse;
- a first silicide-containing portion disposed over the silicon-containing line;
- a second silicide-containing portion disposed over the silicon-containing line;
- and
- a dielectric material that separates the first silicide-containing portion from the second silicide-containing portion by a predetermined distance, and the predetermined distance is about 40% or less of a length of the silicon-containing line.
A method of forming an OTP device, the method comprising:
- forming a silicon-containing line continuously extending between a first node and a second node, wherein the silicon-containing line is part of a fuse that is electrically coupled with a transistor;
- and
- forming a first silicide-containing portion and a second silicide over the silicon-containing line, wherein the first silicide-containing portion is separated from the second silicide-containing portion by a predetermined distance, and the predetermined distance is substantially equal to or less than a length of the silicon-containing line.
Dependencies are inferred from the claim text.