Diodes with Embedded Dummy Gate Electrodes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hsin Yu, Kvei-Feng Yen
Life of this patent
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Abstract
A circuit structure includes a first isolation region, and a first dummy gate electrode over and vertically overlapping the first isolation region. First pickup regions of a diode are formed on opposite sides of the first isolation region, wherein sidewalls of the first pickup regions contact opposite sidewalls of the first isolation region. Second pickup regions of the diode are formed on opposite sides of a combined region of the first pickup regions and the first isolation region, wherein the first and the second pickup regions are of opposite conductive types. A well region is under the first and the second pickup regions and the first isolation region, wherein the well region is of a same conductivity type as the second pickup regions.
Claims22
A circuit structure comprising:
- a first isolation region;
- a first dummy gate electrode over and vertically overlapping the first isolation region;
- first pickup regions of a diode on opposite sides of the first isolation region, wherein sidewalls of the first pickup regions contact opposite sidewalls of the first isolation region;
- second pickup regions of the diode on opposite sides of a combined region of the first pickup regions and the first isolation region, wherein the first and the second pickup regions are of opposite conductive types;
- and
- a well region under the first and the second pickup regions and the first isolation region, wherein the well region is of a same conductivity type as the second pickup regions.
A circuit structure comprising:
- a well region of a first conductivity type;
- a first heavily doped region over and contacting the well region, wherein the first heavily doped region is of a second conductivity type opposite the first conductivity type;
- a first dummy gate electrode over and overlapping the well region;
- a first shallow trench isolation (STI) region over the well region, wherein the first STI region encircles and contacts the first heavily doped region;
- a second dummy gate electrode over and overlapping the first STI region;
- and
- a second heavily doped region over and contacting the well region, wherein the second heavily doped region is of the first conductivity type, and wherein the second heavily doped region encircles and contacts the first STI region.
A circuit structure comprising:
- a well region of a first conductivity type;
- a first shallow trench isolation (STI) region extending into the well region;
- a first dummy gate electrode over and overlapping the first STI region;
- a first and a second heavily doped region over and contacting the well region, wherein the first and the second heavily doped regions are of a second conductivity type opposite the first conductivity type, and wherein the first and the second heavily doped regions are on opposite sides of, and contacting sidewalls of, the first STI region;
- a second STI region over the well region, wherein the second STI region encircles and contacts the first and the second heavily doped regions, and wherein the first and the second STI regions form a continuous STI region;
- a second dummy gate electrode over and overlapping the second STI region;
- and
- a third heavily doped region over and contacting the well region, wherein the third heavily doped region is of the first conductivity type, and wherein the third heavily doped region encircles and contacts the second STI region.
Dependencies are inferred from the claim text.