Schottky Diode and Method for Making It

A Schottky diode comprising:

• a semiconductor base body with a first, high, dopant concentration, one side of said semiconductor base body forming a first main surface of the Schottky diode and thereby providing a first electrical contact surface therefor;
• a semiconductor layer adjacent to said semiconductor base body on the side thereof which is opposite to said first main surface of the Schottky diode, said semiconductor layer having the same conductivity as said semiconductor base body with a lower dopant concentration than said semiconductor base body;
• a first metal layer forming a Schottky contact with said semiconductor layer;
• a second metal layer in contact with said first metal layer, on a side of said first metal layer opposite to said Schottky contact;
• a layer including a connecting means and a planar contact body connected to said second metal layer;
• said layer also forming a second main surface of the Schottky diode and thereby providing a second electrical contact therefor;
• an edge surface extending generally transverse to the Schottky diode at least in the vicinity of said Schottky contact;
• and
• a passivation layer on said edge surface which covers at least that portion of said edge surface around said Schottky contact.