Vertical Memory Devices
OwnerSung-Min Hwang, Woon-Kyung Lee +3inventors
InventorsSung-Min Hwang, Woon-Kyung Lee, Young-Jin Kwon, Tae-Hee Lee, Hui-Chang Moon
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Abstract
Vertical memory devices include a channel, a ground selection line (GSL), a word line, a string selection line (SSL), a pad and an etch-stop layer. The channel extends in a first direction on a substrate. The channel includes an impurity region and the first direction is perpendicular to a top surface of the substrate. At least one GSL, a plurality of the word lines and at least one SSL are spaced apart from each other in the first direction on a sidewall of the channel. The pad is disposed on a top surface of the channel. The etch-stop layer contacts the pad.
Claims12
A vertical memory device, comprising:
- a channel extending in a first direction on a substrate, the channel including an impurity region, the first direction being perpendicular to a top surface of the substrate;
- at least one ground selection line (GSL), a plurality of word lines and at least one string selection line (SSL) spaced apart from each other in the first direction on a sidewall of the channel;
- a pad on a top surface of the channel;
- and
- an etch-stop layer contacting the pad.
8-16. (canceled)
A vertical memory device, comprising:
- a channel on and extending perpendicularly to a support layer;
- a pad on the channel, the channel between the pad and the support layer;
- and
- an etch-stop layer adjacent to the pad.
Dependencies are inferred from the claim text.