Semiconductor nanowire structure reusing suspension pads

A method for forming an integrated circuit, the method comprising:

• forming first and second silicon-on-insulator (SOI) pads on an insulator substrate;
• suspending a nanowire between the first and second SOI pads above the insulator substrate;
• forming a field effect transistor (FET) along the nanowire;
• and
• forming a planar device on at least one respective active area formed on each of the first and second SOI pads.

A method for forming an integrated circuit, the method comprising:

• forming first and second silicon-on-insulator (SOI) pads on an insulator substrate;
• suspending one or more nanowires between the first and second SOI pads above the insulator substrate in a ladder formation;
• forming one or more field effect transistors (FETs) along each of the one or more nanowires;
• and
• forming a planar device on each respective active area formed on each of the first and second SOI pads.