Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode
AssigneeInternational Rectifier Corporation
InventorsTim McDonald, Michael A. Briere
Life of this patent
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Abstract
In one implementation, a stacked composite device comprises a group IV diode and a group III-V transistor stacked over the group IV diode. A cathode of the group IV diode is in contact with a source of the group III-V transistor, an anode of the group IV diode is coupled to a gate of the group III-V transistor to provide a composite anode on a bottom side of the stacked composite device, and a drain of the group III-V transistor provides a composite cathode on a top side of the stacked composite device.
Claims20
A stacked composite device having a composite anode and a composite cathode, said stacked composite device comprising:
- a group IV diode;
- a group III-V transistor stacked over said group IV diode;
- a cathode of said group IV diode being in contact with a source of said group III-V transistor;
- an anode of said group IV diode being coupled to a gate of said group III-V transistor to provide said composite anode on a bottom side of said stacked composite device;
- a drain of said group III-V transistor providing said composite cathode on a top side of said stacked composite device opposite said bottom side.
A composite device package comprising:
- a group IV diode in a first active die;
- a group III-V transistor stacked over said group IV diode in a second active die, a lateral area of said first active die being greater than a lateral area of said second active die;
- a cathode of said group IV diode being in contact with a source of said group III-V transistor;
- an anode of said group IV diode being coupled to a gate of said group III-V transistor to provide a composite anode on a bottom side of said composite device package;
- a drain of said group III-V transistor providing a composite cathode on a top side of said composite device package opposite said bottom side.
A stacked composite device having a composite anode and a composite cathode, said stacked composite device comprising:
- a silicon diode;
- a III-Nitride transistor stacked over said silicon diode;
- a cathode of said silicon diode being in contact with a source of said III-Nitride transistor;
- an anode of said silicon diode being coupled to a gate of said III-Nitride transistor to provide said composite anode on a bottom side of said stacked composite device;
- a drain of said III-Nitride transistor providing said composite cathode on a top side of said stacked composite device opposite said bottom side.
Dependencies are inferred from the claim text.