Stacked Composite Device Including a Group III-V Transistor and a Group IV Vertical Transistor
AssigneeInternational Rectifier Corporation
InventorsTim McDonald, Michael A. Briere
Life of this patent
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Abstract
In one implementation, a stacked composite device comprises a group IV vertical transistor and a group III-V transistor stacked over the group IV vertical transistor. A drain of the group IV vertical transistor is in contact with a source of the group III-V transistor, a source of the group IV vertical transistor is coupled to a gate of the group III-V transistor to provide a composite source on a bottom side of the stacked composite device, and a drain of the group III-V transistor provides a composite drain on a top side of the stacked composite device. A gate of the group IV vertical transistor provides a composite gate on the top side of the stacked composite device.
Claims20
A stacked composite device having a composite drain, a composite source, and a composite gate, said stacked composite device comprising:
- a group IV vertical transistor;
- a group III-V transistor stacked over said group IV vertical transistor;
- a drain on a top side of said group IV vertical transistor being in contact with a source of said group III-V transistor;
- a source on a bottom side of said group IV vertical transistor being coupled to a gate of said group III-V transistor to provide said composite source on a bottom side of said stacked composite device;
- a drain of said group III-V transistor providing said composite drain on a top side of said stacked composite device;
- a gate of said group IV vertical transistor providing said composite gate on said top side of said stacked composite device.
A composite device package comprising:
- a group IV vertical transistor in a first active die;
- a group III-V transistor stacked over said group IV vertical transistor in a second active die, a lateral area of said first active die being greater than a lateral area of said second active die;
- a drain on a top side of said group IV vertical transistor being in contact with a source of said group III-V transistor;
- a source on a bottom side of said group IV vertical transistor being coupled to a gate of said group III-V transistor to provide a composite source on a bottom side of said composite device package;
- a drain of said group III-V transistor providing a composite drain on a top side of said composite device package;
- a gate of said group IV vertical transistor providing a composite gate on said top side of said composite device package.
A stacked composite device having a composite drain, a composite source, and a composite gate, said stacked composite device comprising:
- a silicon vertical FET;
- a III-Nitride transistor stacked over said silicon vertical FET;
- a drain on a top side of said silicon vertical FET being in contact with a source of said III-Nitride transistor;
- a source on a bottom side of said silicon vertical FET being coupled to a gate of said III-Nitride transistor to provide said composite source on a bottom side of said stacked composite device;
- a drain of said III-Nitride transistor providing said composite drain on a top side of said stacked composite device;
- a gate of said silicon vertical FET providing said composite gate on said top side of said stacked composite device.
Dependencies are inferred from the claim text.