Stacked Composite Device Including a Group III-V Transistor and a Group IV Lateral Transistor

A composite device package comprising:

• a group IV lateral transistor in a first active die;
• a group III-V transistor stacked over said group IV lateral transistor in a second active die, a lateral area of said first active die being greater than a lateral area of said second active die;
• a drain of said group IV lateral transistor being in contact with a source of said group III-V transistor;
• a source of said group IV lateral transistor being coupled to a gate of said group III-V transistor to provide a composite source on a top side of said composite device package;
• a drain of said group III-V transistor providing a composite drain on said top side of said composite device package;
• a gate of said group IV lateral transistor providing a composite gate on said top side of said composite device package;
• a substrate of said group IV lateral transistor being on a bottom side of said composite device package.

A stacked composite device having a composite drain, a composite source, and a composite gate, said stacked composite device comprising:

• a silicon lateral FET;
• a III-Nitride transistor stacked over said silicon lateral FET;
• a drain of said silicon lateral FET being in contact with a source of said III-Nitride transistor;
• a source of said silicon lateral FET being coupled to a gate of said III-Nitride transistor to provide said composite source on a top side of said stacked composite device;
• a drain of said III-Nitride transistor providing said composite drain on said top side of said stacked composite device;
• a gate of said silicon lateral FET providing said composite gate on said top side of said stacked composite device;
• a substrate of said silicon lateral FET being on a bottom side of said stacked composite device.