Single-quantum dot device and method of manufacturing the same
AssigneeGwangju Institute of Science and Technology
InventorHong Seok LEE
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Abstract
The present disclosure provides a single-quantum dot device and a method of manufacturing the same. A transparent dielectric thin film is formed on a cover layer and an energy band of quantum dots is adjusted based on compressive stress due to difference in coefficient of thermal expansion therebetween. Specifically, the dielectric thin film has a lower coefficient of thermal expansion than the cover layer and compressive stress is applied to the cover layer by radiation of laser beams. Then, the quantum dots undergo compressive stress and the energy band of the quantum dots increases with increasing intensity of the laser beams.
Claims8
A single-quantum dot device comprising:
- a buffer layer formed on a substrate and including a compound semiconductor;
- quantum dots formed on the buffer layer;
- a cover layer embedding the quantum dots therein;
- and
- a dielectric thin film formed on the cover layer and having a lower coefficient of thermal expansion than the cover layer.
A method of manufacturing a single-quantum dot device comprising:
- sequentially forming a buffer layer, quantum dots, a cover layer and a dielectric thin film on a substrate;
- and
- irradiating a laser beam to the dielectric thin film and the cover layer to adjust an energy band of the quantum dots.
Dependencies are inferred from the claim text.