Method of forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorsShigeki Hattori, Ryota Kitagawa, Koji Asakawa
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Abstract
According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.
Claims6
A method of forming a pattern comprising:
- forming a monolayer on a substrate;
- selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions;
- forming a block copolymer layer comprising first and second block chains on the monolayer;
- and
- causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.
Dependencies are inferred from the claim text.