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US 2012/0238101 A1Published application
Selectivity in a xenon difluoride etch process
AssigneeMemsstar Limited
InventorAnthony O'Hara
Life of this patent
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Abstract
A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.
Claims13
A method of etching silicon (Si) in a process chamber to produce one or more microstructures, the method comprising the steps of:
- (a) producing an etching material vapour comprising xenon difluoride (XeF2) from an etching material source;
- (b) transporting etching material vapour to the process chamber;
- and
- (c) introducing a secondary gas comprising hydrogen to the process chamber.
1 more element
A gas phase etching apparatus for etching silicon (Si) to produce one or more microstructures, the apparatus comprising:
- a process chamber for receiving silicon to be etched;
- a xenon difluoride vapour source;
- a first gas line connecting the xenon difluoride vapour source to the process chamber;
- a hydrogen gas source;
- and
- a second gas line connecting the hydrogen gas source to the process chamber.
3 more elements
Dependencies are inferred from the claim text.