Reducing equivalent thickness of high-k dielectrics in field effect transistors by performing a low temperature anneal

A method of forming a high-k dielectric material, the method comprising:

• forming a first dielectric layer on an exposed silicon-containing semiconductor surface in a gaseous reactive process atmosphere;
• forming a high-k dielectric layer on said first dielectric layer;
• and
• performing an anneal process in a reducing atmosphere at a temperature of 500° C. or less.

A method, comprising:

• exposing a top surface of a placeholder material of a gate electrode structure of a semiconductor device;
• removing said placeholder material so as to expose a silicon-containing surface of a semiconductor region;
• forming a gate dielectric material on said silicon-containing surface by thermally oxidizing said silicon-containing surface, forming a high-k dielectric layer on said oxidized silicon-containing surface and performing an anneal process;
• and
• forming a metal-containing electrode material above said gate dielectric material.