Photomask and a method for determining a pattern of a photomask
AssigneeNanya Technology Corporation
InventorChun Wei Wu
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Abstract
The present invention relates to a photomask and a method for determining a pattern of the photomask. The photomask includes a base and a plurality of square areas, wherein the light transmittancy of the square areas is different from that of the base. The square areas are arranged on the base with an array arrangement, and the gaps between adjacent square areas are not even. Whereby, the photomask has better normalized image log-slope (NILS) or depth of focus (DOF).
Claims19
A photomask for preparing circular patterns in an array features, comprising a base and a plurality of square areas, wherein the light transmittancy of the square areas is different from that of the base, the square areas are arranged on the base with an array arrangement, the photomask comprises a first square area, a second square area and a third square area, a first gap is between the first square area and the second square area, a second gap is between the first square area and the third square area, and the first gap is different from the second gap.
A photomask for preparing circular patterns in an array features, comprising a base and a plurality of square areas, wherein the light transmittancy of the square areas is different from that of the base, the square areas are arranged on the base with an array arrangement, the photomask has a longitudinal axis, each of the square areas has four edges, and an inclination angle is between one edge of each of the square areas and the longitudinal axis.
A method for determining a pattern of a photomask, comprising the steps of:
- providing a preliminary designed pattern, the preliminary designed pattern comprising a basic portion and a plurality of square portions, wherein the square portions are arranged on the basic portion with an array arrangement, the preliminary designed pattern comprises a first square portion, a second square portion and a third square portion, a first gap is between the first square portion and the second square portion, a second gap is between the first square portion and the third square portion, and the first gap is different from the second gap;
- and
- producing the pattern of the photomask according to the preliminary designed pattern.
A method for determining a pattern of photomask, comprising:
- providing a preliminary designed pattern, the preliminary designed pattern comprising a basic portion, a plurality of square portions and a longitudinal axis, wherein the square portions are arranged on the basic portion with an array arrangement, each of the square portions has four edges, and an inclination angle is between one edge of each of the square portions and the longitudinal axis;
- and
- producing the pattern of the photomask according to the preliminary designed pattern.
Dependencies are inferred from the claim text.